http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST4443 -2.3a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet 23-oct-2013 rev. a page 1 of 4 top view rohs compliant product a suffix of -c specifies halogen and lead-free description SST4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. the sot-26 package is universally used for all commercial-indu strial applications. features simple drive requirement smaller outline package surface mount package marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t a =25c -2.3 continuous drain current 3 t a =70c i d -1.8 a pulsed drain current 1 i dm -10 a power dissipation t a =25c p d 1.14 w linear derating factor 0.01 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 3 r ja 110 c / w 4443 date code a h e f l g j k c d b millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.37 ref. b 2.60 3.00 h 0.30 0.55 c 1.20 ref. j - - d 1.40 1.80 k 0.12 ref. e 0.95 ref. l - 0.10 f 0.60 ref. sot-26
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST4443 -2.3a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet 23-oct-2013 rev. a page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250ua gate-threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250ua gate-body leakage current i gss - - 100 na v gs = 20v - - -1 v ds = -30v, v gs =0 drain-source leakage current i dss - - -25 a v ds = -24v, v gs =0 - - 120 v gs = -10v, i d = -2a drain-source on-resistance 2 r ds(on) - - 170 m v gs = -4.5v, i d = -1a forward transconductance g fs - 4 - s v ds = -5v, i d = -2a dynamic total gate charge 2 q g - 3 - gate-source charge q gs - 0.78 - gate-drain charge q gd - 1.6 - nc v ds = -25v, v gs = -4.5v, i d = -2a turn-on delay time 2 t d(on) - 7 - rise time t r - 6 - turn-off delay time t d(off) - 15 - fall time t f - 7.5 - ns v ds = -15v, v gs = -5v, r g =3.3 , r d =15 , i d = -1a input capacitance c iss - 260 - output capacitance c oss - 55 - reverse transfer capacitance c rss - 44 - pf v gs =0, v ds = -25v, f=1.0mhz reverse transfer capacitance rg - 7.3 8.5 f=1.0mhz source - drain diode diode forward voltage 2 v sd - - -1.2 v i s = -0.9a, v gs =0 reverse recovery time 2 t rr - 15 - ns reverse recovery charge q rr - 7 - nc i s = -2a, v gs =0 di/dt=100a/ s notes: 1. pulse width limited by max. junction temperatur e. 2. pulse test 3. surface mounted on 1 in 2 copper pad of fr4 board, t Q 5sec; 180c/w when mounted on min. copper pad.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST4443 -2.3a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet 23-oct-2013 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST4443 -2.3a , -30v , r ds(on) 120 m ? p-channel enhancement mode mosfet 23-oct-2013 rev. a page 4 of 4 characteristic curves
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